The IL017E is a low-power, 3.3/5V, 10 Mbps, 100C Isolator. Typical total quiescent current is just 0.3 mA per channel. 3/1 channel configuration is ideal for isolating SPI. 16-pin wide-body (0.3"-wide) SOIC package.
The "E" suffix indicates this part is lead (Pb) free.
Up to 20 Mpbs, 3.3 V or 5.0 V input logic, 15 kV bus ESD protection, and 20 kV per microsecond transient immunity. 16-pin narrow-body (0.15'') SOIC package.
This part is lead (Pb) free.
Lead-free
product information
The IL3685 is an isolated 40 Mbps RS-485 transceiver for 3.3V buses. 1/5 unit load supports up to 160 nodes. 3.3 V or 5 V input logic. 15 kV bus ESD protection; 50 kV per microsecond transient immunity. 16-pin wide-body SOIC package with True 8™ mm creepage.
This part is lead (Pb) free.
The IL41050TFDE is an isolated CAN FD transceiver. 125C; 5 Mbps; 3.3 V or 5.0 V input logic.
16-pin wide-body (0.3'') RoHS SOIC package with full 8 mm creepage.
The IL485W performs the same EIA-485 and PROFIBUS functions as the IL485, but has an additional uncommitted isolation channel which is useful for fault detection in bus contention situations.
The "E" suffix indicates this part is lead (Pb) free.
The IL510-1 is a 3.3V/5V, single-channel, 2 Mbps DC-correct digital isolator, with optional external synchronization clock, output enable, 25 ns propagation delay, 10 ns pulse width distortion with 1 kVrms isolation and 20 kV/microsecond transient immunity, -40°C to 85°C. Unique 8-pin MSOP.
The "E" suffix indicates this part is lead (Pb) free.
The IL516 is a 3.3V/5V, multichannel 2 Mbps DC-correct digital isolator, 25 ns propagation delay, 10 ns pulse width distortion with 2500 Vrms isolation and 20 kV/microsecond transient immunity, -40°C to 85°C. 16-pin narrow-body (0.15"-wide) SOIC package.
The "E" suffix indicates this part is lead (Pb) free.
The IL710S-1 is a 3.3V/5V, single channel, 150 Mbps CMOS-compatible isolated buffer, with enable, 10 ns propagation delay, 300 ps pulse width distortion with 1 kVrms isolation and 20 kV/microsecond transient immunity. Unique 8-pin MSOP package.
This part is lead (Pb) free.
The IL711S-1 is a 3.3/5V dual-channel unidirectional 150 Mbps CMOS-compatible isolated buffer with 10 ns propagation delay, 300 ps pulse width distortion, 1 kVrms isolation and 20 kV/microsecond transient immunity. Unique 8-pin MSOP package.
This part is lead (Pb) free.
The IL712-2 is a 3.3/5V dual-channel bidirectional 110 Mbps CMOS-compatible isolated buffer with automatic level shifting, 10 ns propagation delay, 3 ns pulse width distortion, 2500 Vrms isolation and 20 kV/microsecond transient immunity. 8-pin PDIP package.
The "E" suffix indicates this part is lead (Pb) free.
The IL712T-1 is a high temperature, 3.3/5V dual-channel, bi-directional, 110 Mbps, CMOS compatible isolated buffer with automatic level shifting, 10 ns propagation delay, 3 ns pulse width distortion, 1 kVrms isolation and 20 kV/microsecond transient immunity. Unique 8-pin MSOP package.
This part is lead (Pb) free.
The IL712T-2 is a high temperature, 3.3/5V dual-channel, bi-directional, 110 Mbps, CMOS compatible isolated buffer with automatic level shifting, 10 ns propagation delay, 3 ns pulse width distortion, 2500 Vrms isolation and 20 kV/microsecond transient immunity. 8-pin PDIP package.
The "E" suffix indicates this part is lead (Pb) free.
The IL715T is a high temperature, 3.3/5V, multi-channel, isolated, 110 Mbps, CMOS compatible logic buffer with automatic level shifting, 10 ns propagation delay, 3 ns pulse width distortion, 2500 Vrms isolation and 20 kV/microsecond transient immunity. 16-pin wide-body (0.3"-wide) SOIC package.
The "E" suffix indicates this part is lead (Pb) free.
The ILDC12-15E is a one-quarter watt fully-regulated 3.3V-to-5V DC-DC boost convertor in an ultraminiature 3 mm x 5.5 mm DFN6 package. The part can be used to generate isolated RS-485 bus supplies, or power high-side gate supplies in H-bridges.
NVE’s proven IsoLoop® isolation technology and a unique ceramic/polymer composite barrier provide 1 kV isolation and virtually unlimited barrier life.
The device minimizes board space and parts count, requiring just three external capacitors. No additional regulation is required and there is no minimum load.
Frequency hopping and shielding reduce EMI, and ferrite beads are not necessary for EMI mitigation.
A high-temperature process allows up to 175 °C junction temperature for full power up to 125 °C operating temperature with no derating. Integrated short-circuit protection avoids excessive power dissipation.
The ILDC13VE is a miniature, one-quarter watt fully-regulated 3.3V-to-5V DC-DC boost convertor. The part can be used to generate isolated RS-485 bus supplies, or power high-side gate supplies in H-bridges.
NVE’s proven IsoLoop® isolation technology and a unique ceramic/polymer composite barrier provide best-in-class 6 kV isolation and virtually unlimited barrier life.
The unique True-8(TM) package provides true eight-millimeter creepage in accordance with IEC60601. Maximum 5 mV peak-to-peak ripple means low noise.
The device minimizes board space and parts count, requiring just three external capacitors. No additional regulation is required and there is no minimum load.
Frequency hopping and shielding reduce EMI, and ferrite beads are not necessary for EMI mitigation.
A high-temperature process allows up to 175 °C junction temperature for full power up to 125 °C operating temperature with no derating. Integrated short-circuit protection avoids excessive power dissipation.
The ILDC13-15E is a one-quarter watt fully-regulated 3.3V-to-6V DC-DC boost convertor in an ultraminiature 3 mm x 5.5 mm DFN6 package. The part can be used to generate isolated high-side gate supplies for H-bridges.
NVE’s proven IsoLoop® isolation technology and a unique ceramic/polymer composite barrier provide 1 kV isolation and virtually unlimited barrier life.
The device minimizes board space and parts count, requiring just three external capacitors. No additional regulation is required and there is no minimum load.
Frequency hopping and shielding reduce EMI, and ferrite beads are not necessary for EMI mitigation.
A high-temperature process allows up to 175 °C junction temperature for full power up to 125 °C operating temperature with no derating. Integrated short-circuit protection avoids excessive power dissipation.