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MRAM Papers and Presentations

Joe Davies, “Magnetoresistive Random-Access Memory,” 13th Non-Volatile Memory Technology Symposium, August 12 - 14, 2013, Minneapolis.

J. E. Davies, D. Gilbert, M. Mohseni, R. Dumas, J. Åkerman, and K. Liu, “Low temperature coupling in [Co/Pd]/Cu/[Co/Ni] spin valves with perpendicular magnetic anisotropy (.pdf),” MMM/Intermag 2013, January 14, 2013, Chicago.

Ya. B. Bazaliy and Andrzej Stankiewicz, “Ballistic precessional contribution to the conventional magnetic switching,” Applied Physics Letters, Vol. 98, April 4, 2011.

J. Davies, A. Stankiewicz, and J. G. Deak, “Asymmetric Hysteresis Loop Expansion in Strained Magnetic Tunnel Junction,” Conference on Magnetism and Magnetic Materials, November 16, 2010, Atlanta, Ga.

Andrzej Stankiewicz, “Energetic analysis of fast magnetic switching,” APS March Meeting, March 16, 2010, Portland, Ore. Published in Bulletin of the American Physical Society, Vol. 55, No. 2.

J. M. Pomeroy, T. C. White, H. Grube, J. C. Read, and J. E. Davies, “Magnetoresistance based first-order reversal curve analysis of magnetic tunnel junctions,” Applied Physics Letters, Vol. 95, July 16, 2009.

J. G. Deak, “Effect of Vortex Handedness on Spin Momentum Torque Dynamics in Dual Vortex Ferromagnetic Nanopillar Structures (.pdf),” Conference on Magnetism and Magnetic Materials, November 5-9, 2007, Tampa, Fla. Published in Journal of Applied Physics, Vol. 103, April 2, 2008 (redistribution subject to AIP license or copyright).

J. G. Deak, “Influence of Pinned-Layer Dispersion on Magnetic Tunnel Junction Switching Distributions,” presented at the 10th Joint MMM/Intermag Conference, January 8, 2007, Baltimore, Md. Published in IEEE Transactions on Magnetics, Vol. 43, No. 6, pp. 2821-2823, June 2007. (©2007 IEEE. Personal use of IEEE material provided through this site is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.)

J. G. Deak, J. M. Daughton, and A. V. Pohm, "Effect of Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM (.pdf)," INTERMAG, May 8, 2006, San Diego, Calif. Published in IEEE Transactions on Magnetics, Vol. 42, No. 10, pp. 2721-2723, October 2006 (©2006 IEEE).

A. V. Pohm, J. M. Daughton, and J. G. Deak, "Thermally Assisted Writing of Cells with IrMn Pinning Using 27 Nanosecond Pulses," INTERMAG, May 8, 2006, San Diego, Calif. (©2006 IEEE).

A. V. Pohm, J. M. Daughton, and J. G. Deak, "Analysis of 60 Nanometer Diameter SDT Memory Cells with Thermally Assisted Writing," Conference on Magnetism and Magnetic Materials (MMM), November 2, 2005, San Jose, Calif. Published in Journal of Applied Physics, Vol. 99, No. 8, April 15, 2006.

Dr. James G. Deak, "Thermal MRAM (invited) (.pdf)," International Conference on Computer Design (ICCD), October 4, 2005, San Jose, Calif.

Jim Daughton, "Magnetic Spin Devices: 7 Years from Discover to Product. Where now? (.pdf)," 2004 Materials Research Society Fall Meeting Technical Program, Symposium X—Frontiers of Materials Research—Innovations to Impact, December 1, 2004, Boston, Mass.

R. Sinclair and A. Pohm, "Scaling and Power Properties of Thermally Written MRAM (.pdf)," 5th Annual Non-Volatile Memory Technology Symposium, November 16, 2004, Orlando, Fla.

J. Anderson, D. Brownell, G. Prinz, H. Huggins, L. Van, J. Christodoulides, and J. Zhu, "Address line-assisted switching of vertical magnetoresistive random access memory (VMRAM) cells (.pdf)," 49th Annual Conference on Magnetism and Magnetic Materials, November 7-11, 2004, Jacksonville, Fla.

J. Deak, "Effect of Spin Injection in Thermally Assisted MRAM (.pdf)," presented at 49th Annual Conference on Magnetism and Magnetic Materials, November 7-11, 2004, Jacksonville, Fla. Published in Journal of Applied Physics, Vol. 97, No. 10, May 15, 2005.

Dr. Jim Daughton, "Spintronics Applications at NVE," First Annual Center for Nanoscale Systems Nanotechnology Symposium, May 14, 2004, Cornell University, Ithaca, N.Y.

N. C. Emley, F. J. Albert, E. M. Ryan, I. N. Krivorotov, D. C. Ralph, R. A. Buhrman, J. M. Daughton, and A. Jander, "Reduction of spin transfer by synthetic antiferromagnets (.pdf)," Applied Physics Letters, Vol. 84, No. 21, p. 4257, May 24, 2004.

D. Wang, C. Nordman, J. M. Daughton, Z. Qian, and J. Fink, "70% TMR at Room Temperature for SDT Sandwich (.pdf)," presented at the 9th Joint MMM/Intermag Conference, January 6, 2004. Published in IEEE Transactions on Magnetics, July 2004 (©2004 IEEE).

James M. Daughton, "Spin Electronics Final Report, Chapter 6—Magnetoelectronic Devices (.pdf)," p.64, Defense Technical Information Center, August 2003.

Dexin Wang, James M. Daughton, Zhenghong Qian, Cathy Nordman, Mark Tondra and Art Pohm, "Spin Dependent Tunneling Junctions with Reduced Neel Coupling (.pdf)," 47th Annual Conference on Magnetism and Magnetic Materials November 15-18, 2002, Tampa, Fla. (Published in Journal of Applied Physics, Volume 93, Number 10, p. 8558, May 15, 2003.)

R. Beech and R. Sinclair, "Low Power 256K MRAM Design (.pdf)," Proceedings of the Nonvolatile Memory Technology Symposium 2002, November 6, 2002.

R. Sinclair and R. Beech, "High Speed, Radiation Hard MRAM Buffer (.pdf)," Proceedings of the Nonvolatile Memory Technology Symposium 2002, November 6, 2002.

Jian-Gang Zhu and James Daughton, "A Novel Low Switching Current MRAM Design," IEEE International Magnetics Conference, April 28-May 2, 2002, Amsterdam.

James M. Daughton, "Advanced MRAM Concepts (.pdf)," Defense Technical Information Center, February 7, 2001 (© NVE).

R. S. Beech, J. A. Anderson, A. V. Pohm and J. M. Daughton, "Curie Point Written Magnetoresistive Memory (.pdf)," 44th Annual Conference on Magnetism and Magnetic Materials, Nov. 15-18, 1999, San Jose Calif. (Published in Journal of Applied Physics, Vol. 87, No. 9, p. 6403, May 1, 2000.)

D. Wang, M. Tondra, A. V. Pohm, C. Nordman, J. Anderson, J. M. Daughton, and W. C. Black, "Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode (.pdf)," Journal of Applied Physics, Vol. 87, No. 9, p. 6385, May 1, 2000 (this article may be downloaded for personal use only. Any other use requires permission of the author and the American Institute of Physics).

James M. Daughton, "Magnetoresistive Random Access Memory (MRAM) Technology (.pdf)," February 4, 2000.

K. Bussmann, G. Prinz, S. Cheng, J. Zhu, Y. Zheng, J. Daughton, R. Beech, D. Wang, and R. Womack, "Current Perpendicular-to-Plane GMR for Magnetoresistive RAM (.pdf)," INTERMAG, Kyongju, Korea, May 21, 1999.

R. A. Sinclair, S. A. Mundon, S. C. Aryal, and C. M. Sinclair, "A practical 256K GMR NV memory for high shock applications," Nonvolatile Memory Technology Conference, June 24, 1998, Albuquerque, N. M.

B. A. Everitt and A. V. Pohm, "Single-domain model for pseudo spin valve MRAM cells," IEEE Transactions on Magnetics, Vol. 33, No. 5, pp. 3289-3291, September 1997.

J. M. Daughton, "Magnetic tunneling applied to memory (invited; .pdf)," presented at the 41st Annual Conference on Magnetism and Magnetic Materials, November 12, 1996, Atlanta, Ga. Published in Journal of Applied Physics, Vol. 81, No. 8, p. 3758, April 15, 1997 (this article may be downloaded for personal use only. Any other use requires permission of the author and the American Institute of Physics).

R. S. Beech, J. Anderson, J. Daughton, B. A. Everitt, and D. Wang, "Spin dependent tunneling devices fabricated using photolithography (.pdf)," presented at INTERMAG, April 9, 1996, Seattle. Published in IEEE Transactions on Magnetics, Vol. 32, No. 5, pp. 4713-4715, Sept. 1996 (©1996 IEEE).

J. L. Brown and A. V. Pohm, "1-Mb memory chip using giant magnetoresistive memory cells," IEEE Transactions on Components, Packaging, and Manufacturing Technology,
Vol. 17, No. 3, pp. 373 - 379, September 1994.