| A nanotechnology spintronic device that
produces a large change in resistance through a normally
insulating layer, depending on the predominant electron
spin in a free layer. This allows spin to be sensed as
electrical resistance for interface to conventional electronics.
SDT devices use structures as thin as a few atomic layers.
SDT devices are at the heart of MRAM and low-field sensors.
Also known as Magnetic Tunnel Junctions (MTJs) or Tunneling
Magnetic Junctions (TMJs). |
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