WEBVTT
Kind: captions
Language: en

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Well, today we're "digging" into spintronic
tunneling with Daniela at NVE.

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So, Danno, what is tunneling and how does it work?

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Tunneling is a nano-scale phenomenon where,
under the right conditions, electrons can

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tunnel through very thin, normally insulating
materials, causing lower resistance.

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Structures are called Magnetic Tunnel Junctions,
or Tunneling Magnetoresistors.

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Let's look at one.

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The section on the right is called the "free layer," because its electron spins are free to change,

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and the layer on the left is the “pinned,”
or reference layer, because

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its spin orientation is fixed
when the device is made.

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The barrier between the pinned and free layers

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is thin enough that electrons can tunnel through,

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As the meter shows,
because of the scattering

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caused by electrons
spinning in opposite directions

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the tunnel barrier is close to
its insulating state.

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When a field is applied, the free-layer polarization switches,

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electrons can tunnel,
and the resistance is low,

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even though this is
a normally insulating material.

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In this way we can turn the esoteric property
of electron spin into something useful: resistance.

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The resistance change can be very large.
Large signals can mean:

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smaller size, 
more precision, and 
lower power

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spintronic devices.

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Here's an SEM of an actual tunnel junction
made here at NVE.

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This white stripe is an aluminum-oxide tunnel barrier—eight atoms thick.

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This is probably magnified nearly a million times on your screen, so an eight-inch wafer

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would appear a hundred miles in diameter.

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Cool. How can our viewers "burrow" into this?

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You can go to nve.com for lots more info.

