NVE Corporation Product Announcement

NVE Corporation Launches Low-Power Isolator Family
Typical total quiescent current only 0.3 milliamps per channel

IL01x Diagrams
EDEN PRAIRIE, Minn.—June 7, 2018—NVE Corporation today launched the new IL01x-Series of low-power isolators. With typical total quiescent current of just 0.3 milliamps per channel, the new parts draw one-fourth the power of NVE’s flagship isolators.

The new devices use NVE’s patented low-power spintronic Tunneling Magnetoresistance (TMR) technology.

A unique ceramic/polymer composite barrier provides excellent isolation, best-in-class barrier resistance, and virtually unlimited barrier life.

Even with the low power, the new parts provide remarkable performance:
  • 10 megabits per second guaranteed maximum data rate
  • No carriers or clocks for low electromagnetic interference
  • 100 teraohm insulation resistance
  • 2.5 kilovolts isolation
  • 44000 year barrier life
  • -40 to +100 degrees Celsius

The four-channel versions use NVE’s unique True 8™ wide-body SOIC-16 package with full eight-millimeter creepage in accordance with IEC60601.

Applications include:
  • Four-to-20 milliamp loop-powered controls
  • Battery-powered instruments
  • SPI
The IL01x-Series began sampling in March 2018, and now includes three popular two-direction channel configurations:
  Package   Price
 IL011-3E  2/0 0.6 mA SOIC-8 $4.05 Q3 ’18
 IL012-3E  1/1 Now
IL015E 4/0 1.2 mA 0.3-inch
$5.30 Q3 ’18
IL016E 2/2 Now
IL017E 3/1 Now
                        *Typical Iq1 + Iq2; Vdd1 = Vdd2 = 3.3V

The one-direction IL011-3E and IL015E will be available in the third quarter.

A datasheet and more information are available at www.nve.com.

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

Statements used in this announcement that relate to future plans, events, or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC.