NVE Introduces Full-Bridge TMR Angle Sensor
AAT101 provides 400 millivolts per volt peak-to-peak output signals with
EDEN PRAIRIE, Minn.September 5, 2017NVE Corporation (Nasdaq: NVEC)
today announced the introduction of the AAT101-10E Full-Bridge Tunneling Magnetoresistance
(TMR) Angle Sensor, a high-output magnetic sensor for angle measurements based
on rotating magnetic fields.
The new sensor has two full-bridge outputs for double the output signal. The full-bridge
configuration allows direct replacement of semiconductor sensors, providing larger
output signals and lower power.
applications include rotary encoders, and motor shaft position sensors, and Internet-of-Things
The AAT101 typical device resistance is 625 kilohms for low power consumption,
and the sensor can run on a single button cell or harvested power. Harvested power
can be intermittent, and AAT-Series sensors detect and maintain absolute position
information, and immediately power up in the correct position when power is restored.
Other AAT101 features include:
625 kilohm device resistance for low power and battery
Sine and cosine outputs for direction detection
400 millivolts per volt peak-to-peak output signals
1.5% maximum nonsinusoidality error
Ultraminiature 2.5 by 2.5 by 0.8 millimeter
AAT-Series sensors use unique Tunneling Magnetoresistance (TMR) elements for large
signals and low power consumption. Also known as Spin-Dependent Tunneling (SDT),
Magnetic Tunnel Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling
Magnetoresistance is a spintronic quantum effect that produces a dramatic resistance
change in a normally insulating layer, depending on the magnetic field and thus
the predominant electron spin in a free layer.
The sensors provide sine and cosine signals defining the angle of rotation.
Outputs are proportional to the supply voltage and peak-to-peak output voltages
are much larger than conventional sensors. Because they are resistive devices
with no active components, AAT-Series sensors have no minimum supply voltage and
can be powered from single cells.
The AAT101 is the fifth member of the groundbreaking AAT Angle Sensor family.
The other four part types have half-bridge outputs. The AAT009 has six megohm
typical device resistance for ridiculously low power consumption; the AAT003 has
20 kilohm output impedances for direct interface to microcontrollers; and
the AAT006 operates at magnetic fields as low as 15 oersteds.
Available now, AAT101-10E Low-Field Angle Sensors are priced at $2.23 each in
1,000-piece quantities. Datasheets and more information are available at www.nve.com.
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
Statements used in this announcement that relate to future plans, events, or
performance are forward-looking statements that are subject to certain risks and
uncertainties including, among others the risk factors listed from time to time
in our filings with the SEC, including our Annual Report on Form 10-K and other
reports filed with the SEC.