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PRODUCT ANNOUNCEMENT |
NVE Introduces New Angle Sensor
AAT003-10E Provides Large Signal and Low Impedance Without Amplification
EDEN PRAIRIE, Minn.January 29, 2014NVE Corporation (Nasdaq: NVEC)
today announced the introduction of the AAT003-10E Tunneling Magnetoresistance
(TMR) Angle Sensor, a high-output magnetic sensor element for position measurements
when a rotating magnetic field is applied.
The new part has the same best-in-class accuracy as the groundbreaking AT001-10E,
but with lower bridge resistance for a low-noise interface to signal-processing
circuitry while still maintaining low power operation.
Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel Junction (MTJ),
or Tunneling Magnetic Junction (TMJ), Tunneling Magnetoresistance is a spintronic
quantum effect that produces a dramatic resistance change in a normally insulating
layer, depending on the magnetic field and thus the predominant electron spin
in a free layer. The device has four TMR elements configured as an angle sensor
with full quadrature sine and cosine outputs.
Key AAT003 features include:
0.5 degrees maximum angular measurement error
Large output signal without amplification
40 kilohms nominal bridge resistance
Wide airgap tolerance
Sine and cosine outputs for direction detection
Ultraminiature 2.5 mm x 2.5 mm x 0.8 mm
TDFN6
AAT-Series Sensor outputs are proportional to the supply voltage and peak-to-peak
output voltages are much larger than other sensor technologies. Typical applications
include rotary encoders and motor shaft position sensors.
The other member of the AAT Angle Sensor family, the AAT001, has 1.25 megohm
nominal bridge resistance for microwatt power consumption and is ideal for battery
applications.
Available now, AAT003-10E Angle Sensors are priced at $1.94 each in 1,000-piece
quantities. Datasheets and more information are available at www.nve.com.
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
Statements used in this announcement that relate to future plans, events, or performance
are forward-looking statements that are subject to certain risks and uncertainties
including, among others the risk factors listed from time to time in our filings
with the SEC, including our Annual Report on Form 10-K and other reports filed
with the SEC.
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