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PRODUCT ANNOUNCEMENT |
NVE Introduces 5 kV Two-Channel Isolators
Best-in-class high-voltage performance of
5000 volts isolation and 1000 working volts
EDEN PRAIRIE, Minn.December 3, 2014NVE Corporation (Nasdaq: NVEC)
today announced the introduction of the two-channel IsoLoop IL711VE / IL721VE
Isolators with best-in-class high-voltage performance.
The two-channel parts are available either with one channel each direction or
both channels the same direction.
V-Series Isolator specifications include:
5 kVrms isolation (1 minute) per UL 1577
1000 Working Voltage (line voltage) per VDE 0884-10
110 Mbps
Up to 125 degrees Celsius operating temperature
More than 100 teraohm barrier resistance
A Unique Barrier
Isolation is provided by NVEs unique ceramic/polymer composite isolation
barrier with a barrier resistance of 100 teraohms and an extrapolated life of
44000 years.
True 8 millimeter Creepage
The new isolators use NVEs True 8 isolator package, which meets demanding
eight millimeter creepage requirements under IEC 60601. With ordinary wide-body
packages, full eight millimeter creepage cannot be assured.
Rigorous Testing
V-Series Isolators are 100% tested to 6000 Vrms (8486 Vpeak), and to
a best-in-class 1000 Vrms Working Voltage per VDE 0884-10.
Popular Applications
The new parts are ideal for demanding applications such as medical instruments,
smart-grid interfaces, motor drives, and power supplies.
Available Now
The new IL711VE and IL721VE are in stock for immediate delivery, along with many
other 5 kV isolators, including four-channel isolators and isolated transceivers.
Datasheets and more information are available at www.nve.com.
From the Leaders in Practical Spintronics
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
Statements used in this announcement that relate to future plans, events, or
performance are forward-looking statements that are subject to certain risks and
uncertainties including, among others the risk factors listed from time to time
in our filings with the SEC, including our Annual Report on Form 10-K and other
reports filed with the SEC.
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