NVE Granted Magnetothermal MRAM Patent
October 12, 2010NVE Corporation today was granted patent number 7,813,165,
titled Magnetic Memory Layers Thermal Pulse Transitions, relating
to Magnetothermal Magnetoresistive Random Access Memory (MRAM).
MRAM is an integrated-circuit memory which is fabricated with nanotechnology and
which uses electron spin to store data. Magnetothermal MRAM is an MRAM design
that uses a combination of magnetic fields and ultra-fast heating from electrical
current pulses to reduce the energy required to write data.
NVE has more than 50 U.S. patents, and more than 100 patents worldwide issued,
pending, or licensed from others. Links to the new patent and NVEs other
U.S. patents can be found on the Patents page of the companys Website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
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risks and uncertainties including, among others, such factors as uncertainties
relating to the grant of patents in the future, risks in the enforcement of our
patents, as well as the risk factors listed from time to time in our filings with
the SEC, including our Annual Report on Form 10-K and other reports filed with
the SEC. The company undertakes no obligation to update forward-looking statements
in this bulletin.