NVE Granted MRAM Patent
May 11, 2010NVE Corporation today was granted patent number 7,715,228,
titled Cross-Point Magnetoresistive Memory, relating to Magnetoresistive
Random Access Memory (MRAM).
MRAM is an integrated-circuit memory which is fabricated with nanotechnology and
which uses electron spin to store data. MRAM may have the potential to combine
many of the best attributes of different types of semiconductor memories.
The invention was made with U.S. Government support under a Missile Defense Agency
contract and assigned to NVE. The U.S. Government has certain rights in the invention.
NVE has more than 50 U.S. patents, and more than 100 patents worldwide issued,
pending, or licensed from others. Links to the new patent and NVEs other
U.S. patents can be found on the Patents page of the companys Website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
Statements used in this bulletin that relate to future plans, events, financial
results or performance are forward-looking statements that are subject to certain
risks and uncertainties including, among others, such factors as uncertainties
relating to the grant of patents in the future, risks in the enforcement of our
patents, as well as the risk factors listed from time to time in our filings with
the SEC, including our Annual Report on Form 10-K and other reports filed with
the SEC. The company undertakes no obligation to update forward-looking statements
in this bulletin.