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Product Announcement |
NVE Introduces Nanopower Medical Magnetic Sensor
Packaged Sensor Is Just 1.1 Millimeters Square;
Draws 72 Nanowatts; 10 Oersted Sensitivity
EDEN PRAIRIE, Minn.November 20, 2008NVE Corporation (Nasdaq: NVEC)
today announced the introduction of the BD020 Giant Magnetoresistive (GMR) magnetic
sensor, designed for implantable medical devices.
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Packaged in an ultraminiature, four-pin, 1.1 millimeter by 1.1 millimeter
by 0.45 millimeter Ultra Leadframe Land Grid Array (ULLGA) leadless package,
the BD020 is NVEs smallest packaged part. For wire bonding assembly, 0.625
mm x 0.625 mm bare die are also available.
The integrated circuit consists of a GMR sensor element, CMOS signal processing
circuitry to convert the analog sensor element output to a digital output, and
oscillator and timing circuitry for power management duty cycling.
Configured as a magnetic switch, the sensor output turns on when a magnetic field
is applied and turns off when the field is removed. The minimum magnetic operate
point is 10 oersteds (one millitesla). The applied magnetic field can be
of either polarity, and the magnetic operate point is extremely stable over supply
voltage and temperature.
Supply voltage range is 2.4 to 3.6 volts. The part is internally duty cycled at
approximately 0.1 percent to conserve power, and typical power consumption
is a remarkable 72 nanowatts at 2.4 volts. Worst-case power consumption
is 576 nanowatts at 3.6 volts. An integrated latch ensures the output
is available continuously. The output is current-sinking, and can sink up to 100 microamps.
Compared to reed switches, BD020 sensors feature smaller size, more magnetic sensitivity,
more precise operate points, and inherent solid state reliability. Ideal applications
include battery-powered implantable devices such as pacemakers, ICDs, neurostimulators,
and drug pumps.
Datasheets and more information are available at www.nve.com/medical.
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
Statements used in this announcement that relate to future plans, events, or
performance are forward-looking statements that are subject to certain risks and
uncertainties including, among others the risk factors listed from time to time
in our filings with the SEC, including our Annual Report on Form 10-K and other
reports filed with the SEC.
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