INFORMATION BULLETIN

June 24, 2008—NVE Corporation has been notified by the U.S. Patent and Trademark Office of the expected grant today of two patents relating to spintronics.

The first patent is number 7,390,584 and titled “Spin dependent tunneling devices having reduced topological coupling.” Spin-dependent tunnel junctions, also known as magnetic tunnel junctions or tunneling magnetic junctions, are spintronic structures that can form the heart of spintronic magnetoresistive random access memory technology, commonly known as MRAM.

The second patent is number 7,391,091 and titled “Magnetic particle flow detector,”and is related to spintronic biosensor technology, which could be used in laboratory-on-a-chip systems.

The projected grants will bring NVE’s U.S. patent total to 48. The company has more than 100 patents worldwide issued, pending, or licensed from others. Links to the new patent and NVE's other U.S. patents can be found at the “About NVE” section of the company's Website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

Statements used in this bulletin that relate to future plans, events, financial results or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to the grant of patents in the future, risks in the enforcement of our patents, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC. The company undertakes no obligation to update forward-looking statements in this bulletin.