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INFORMATION BULLETIN |
NVE Receives Fiftieth Patent
December 23, 2008NVE Corporation was granted a patent today relating
to tamper detection and protection using magnetoresistive sensing memory storage.
The patent is number 7,468,664 and titled Enclosure tamper detection and
protection.
Magnetoresistive memory, commonly known as MRAM, is an integrated-circuit memory
which uses electron spin to store data.
The grant brings NVEs U.S. patent total to 50. The company has more than
100 patents worldwide issued, pending, or licensed from others. Links to the new
patent and NVEs other U.S. patents can be found at the About NVE
section of the company's Website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that relies on electron spin rather than electron charge to acquire, store and
transmit information. The company manufactures high-performance spintronic products
including sensors and couplers that are used to acquire and transmit data. NVE
has also licensed its spintronic magnetoresistive random access memory technology,
commonly known as MRAM.
Statements used in this bulletin that relate to future plans, events, financial
results or performance are forward-looking statements that are subject to certain
risks and uncertainties including, among others, such factors as uncertainties
relating to the grant of patents in the future, risks in the enforcement of our
patents, as well as the risk factors listed from time to time in our filings with
the SEC, including our Annual Report on Form 10-K and other reports filed with
the SEC. The company undertakes no obligation to update forward-looking statements
in this bulletin.
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