EDEN PRAIRIE, Minn.--March 20, 2007--NVE Corporation (Nasdaq: NVEC) announced today that it has been notified by the U.S. Patent and Trademark Office (USPTO) of the expected grant of a patent relating to Vertical Transport Magnetoresistive Random Access Memory (VMRAM).

NVE has been notified that the patent, titled "Radial field generating selection conductor device," will be issued today. The patent is number 7,193,286 and is the grant of a patent under the application published by the USPTO as number 2006-0022238. The new patent relates to addressing Vertical Transport MRAM arrays.

The co-inventors were an NVE researcher and Professor Jian-Gang Zhu of Carnegie Mellon University, and the patent is assigned to NVE.

MRAM is an integrated-circuit memory which is fabricated with nanotechnology and which uses electron spin to store data. MRAM may have the potential to combine many of the best attributes of different types of semiconductor memories. VMRAM is a high-density type of MRAM that employs current perpendicular to the plane to switch spintronic memory elements. Defense Department documents have said VMRAM could be applicable in general ultra-dense nonvolatile memory or as a hard disk replacement.

The grant brings NVE's U.S. patent total to 41. The company has more than 100 patents worldwide issued, pending, or licensed from others. Links to the new patent and NVE's other U.S. patents can be found at the "About NVE" section of the company's Website (www.nve.com).

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that many experts believe represents the next generation of microelectronics. NVE licenses its MRAM intellectual property and sells spintronic products, including sensors and couplers, to revolutionize data sensing and transmission.

Statements used in this press release that relate to future plans, events, or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others, such factors as uncertainties relating to the grant of patents in the future, risks in the enforcement of our patents, as well as the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC.

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