NVE Notified of Grant of Magnetothermal
MRAM Patent
EDEN PRAIRIE, Minn.--February 13, 2007--NVE Corporation (Nasdaq: NVEC) announced
today that it has been notified by the U.S. Patent and Trademark Office (USPTO)
of the expected grant of a patent relating to magnetothermal Magnetoresistive
Random Access Memory (MRAM).
NVE has been notified that the patent, titled "Magnetic Memory Layers
Thermal Pulse Transitions," will be issued today. The patent is number 7,177,178
and is the grant of a patent under the application published by the USPTO as number
2006-0083056. The grant is in addition to patent number 7,023,723, which is similarly
titled and was granted in April 2006. The invention of the new patent relates
to dual-film MRAM cells.
MRAM is an integrated-circuit memory which is fabricated with nanotechnology
and which uses electron spin to store data. MRAM may have the potential to combine
many of the best attributes of different types of semiconductor memories.
Magnetothermal MRAM uses a combination of ultra-fast magnetic fields and heat
pulses, both from electrical current, to reduce the energy required to write data
and allow reduction of the memory cell size while maintaining thermal stability.
The grant brings NVE's U.S. patent total to 40. The company has more than 100
patents worldwide issued, pending, or licensed from others. Links to the new patent
and NVE's other U.S. patents can be found at the "About NVE" section
of the company's Website (www.nve.com).
NVE is a leader in the practical commercialization of spintronics, a nanotechnology
that many experts believe represents the next generation of microelectronics.
NVE licenses its MRAM intellectual property and sells spintronic products, including
sensors and couplers, to revolutionize data sensing and transmission.
Statements used in this press release that relate to future plans, events,
financial results or performance are forward-looking statements that are subject
to certain risks and uncertainties including, among others, such factors as uncertainties
relating to the grant of patents in the future, risks in the enforcement of our
patents, as well as the risk factors listed from time to time in our filings with
the SEC, including our Annual Report on Form 10-K and other reports filed with
the SEC.
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