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Research and Development

NVE's Advanced Technology R&D department has some of the world's best and brightest spintronics researchers.

We have won over $30 million dollars in U.S. government research contracts, including more than 30 Magnetoresistive Random Access Memory (MRAM) development contracts. We have also conducted a number of contract research for leading commercial and military companies.

Major research thrusts are in three strategic areas:
Magnetoresistive Random Access Memory (MRAM)
Low-field sensors and spin-dependent tunneling (SDT) junctions
Biomedical nanosensors for "laboratories-on-chips"
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