NVE Introduces Ultralow-Power Angle Sensor AAT009-10E Has Six Megohm Device Resistance EDEN PRAIRIE, Minn.—June 30, 2016—NVE Corporation (Nasdaq: NVEC) today announced the introduction of the AAT009-10E Ultralow-Power Tunneling Magnetoresistance (TMR) Angle Sensor, a high-output magnetic sensor for angle measurements based on rotating magnetic fields.  AAT-Series Sensor output voltages are much larger than other sensor technologies. Typical applications include rotary encoders, and motor shaft position sensors, and Internet-of-Things end nodes. The AAT009 has six megohm device resistance for ridiculously low power consumption, and can run years on a single button cell or on scant harvested power. Harvested power can be intermittent, and AAT-Series sensors detect and maintain absolute position information, and immediately power up in the correct position after power is restored. Key AAT009 features include: • Six megohm typical device resistance for ultralow power consumption • 0.5 degrees maximum angular measurement error with fixed magnetic bias • 200 mV/V peak-to-peak output signals • Wide magnet airgap tolerance • Sine and cosine outputs for direction detection • Ultraminiature 2.5 mm x 2.5 mm x 0.8 mm TDFN6 AAT-Series sensors use unique Tunneling Magnetoresistance (TMR) elements for large signals and low power consumption.Also known as Spin-Dependent Tunneling (SDT), Magnetic Tunnel Junction (MTJ), or Tunneling Magnetic Junction (TMJ), Tunneling Magnetoresistance is a spintronic quantum effect that produces a dramatic resistance change in a normally insulating layer, depending on the magnetic field and thus the predominant electron spin in a free layer. The sensors provide sine and cosine signals defining the angle of rotation. Outputs are proportional to the supply voltage and peak-to-peak output voltages are much larger than conventional sensor technologies. Because they are resistive devices with no active components, AAT-Series sensors have no minimum voltage and can be powered from single cells. The other two members of the AAT Angle Sensor family are the the AAT001 with a 1.25 megohm typical device resistance, and the AAT003 with a 40 kilohm device resistance, which is ideal for direct interface to microcontrollers.Available now, AAT009-10E Angle Sensors are priced at $1.94 each in 1,000-piece quantities. Datasheets and more information are available at www.nve.com. NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM. Statements used in this announcement that relate to future plans, events, or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC. ### |
